GODISOV Oleg | Science and Technical Center "Centrotech-ECP"Electrochemical Plant

Institute of Crystal Growth

Department of Applied Physics and Physico-Informatics, Keio University

Institute Of Crystal Growth

Department Of Applied Physics And Physico-informatics And Crest-jst Keio University

Department Of Applied Physics And Physico-informatics Crest-jst Keio University

Department of Applied Physics and Physico-Informatics, CREST-JST, Keio University

Department Of Applied Physics And Physico-informatics Crest-jst Keio University

Institute of Chemistry of High-Pure Substances of the RAS, Tropinin-Str. 49, Nizhny Novgorod 603600, Russian Federation

Institute of Chemistry of High-Pure Substances of the RAS, Tropinin-Str. 49, Nizhny Novgorod 603600, Russian Federation

VITCON Projectconsult GmbH, Dornbluthweg 5, Jena D-07743, Germany

Institute of Crystal Growth, Max-Born-Str. 2, Berlin D-12489, Germany

Institute of Crystal Growth, Max-Born-Str. 2, Berlin D-12489, Germany

Department of Applied Physics and Physico-Informatics, CREST-JST, Keio University, 3-14-1, Yokohama 223-8522, Japan

Science and Technical Center "Centrotech-ECP" Electrochemical Plant, Krasnogvardeyskaya Sq, 3, Saint Petersburg 195272, Russian Federation

Institute of Chemistry of High-Pure Substances of the RAS, Tropinin-Str. 49, Nizhny Novgorod 603600, Russian Federation

Science and Technical Center "Centrotech-ECP" Electrochemical Plant, Krasnogvardeyskaya Sq, 3, Saint Petersburg 195272, Russian Federation

Department of Applied Physics and Physico-Informatics, CREST-JST, Keio University, 3-14-1, Yokohama 223-8522, Japan

Institute of Chemistry of High-Pure Substances of the RAS, Tropinin-Str. 49, Nizhny Novgorod 603600, Russian Federation

Department of Applied Physics and Physico-Informatics, CREST-JST, Keio University, 3-14-1, Yokohama 223-8522, Japan

Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan