Accurate Determination of the Intrinsic Diffusivities of Boron, Phosphorus, and Arsenic in Silicon: The Influence of SiO2 Films

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概要

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• Accurate determination of the intrinsic diffusivities of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) is reported. We show that the differences in the B, P, and As diffusivities reported in the previous works arise from whether SiO2 films existed on the Si sample surfaces. Impurity diffusion near the Si surface without SiO2 is affected by oxidation of Si even in the nominally inert atmosphere, which has unavoidable residual oxygen background due to the open furnace. On the other hand, a surface SiO2 film of ${\sim}20$ nm thickness prepared before the diffusion annealing is sufficient to block further oxidation of Si, i.e., truly intrinsic diffusivities of impurities have been obtained from samples having surface oxide layers.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-08-25

著者

• Itoh Kohei

  Department Of Applied Physics And Physico-informatics And Crest-jst Keio University

• UEMATSU Masashi

  Department of Applied Physics and Physico-Informatics, Keio University

• KAWAMURA Yoko

  Department of Life Science, Graduate School of Agricultural Science, Tohoku University

• Shimizu Yasuo

  Department 4 Technology Research Division 2 Honda R&d Co. Ltd. Automobile R&d Center

• Nakamura Mitsutoshi

  Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Naganawa Miki

  Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

• Ito Hiroyuki

  Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Ishikawa Hideaki

  Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Ohji Yuzuru

  Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Kawamura Yoko

  Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

• Shimizu Yasuo

  Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

• Uematsu Masashi

  Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

• Itoh Kohei

  Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan

• Itoh Kohei

  Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

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