Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
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概要
- 論文の詳細を見る
Compressively strained Ge channel p-type modulation-doped structures were fabricated on SiGe buffer layers planarized by chemical mechanical polishing (CMP). While the hole mobility of the sample without CMP was drastically reduced with decreasing channel thickness, a much higher mobility was maintained for the sample with CMP, suggesting that atomic-scale interface roughness as well as long-ranged roughness was significantly eliminated by CMP. As a result, mobility enhancement factors of 8 and 1.8 at 10 and 300 K, respectively, were obtained by CMP for a channel thickness of 7.5 nm, indicating that the planarization is very essential for realization of high-mobility strained Si/Ge heterostructures.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-10-10
著者
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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ABE Yasuhiro
Research & Development Division, Nippon Chemical Industrial Co., Ltd.
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Satoh Hikaru
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Nakagawa Kiyokazu
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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Satoh Hikaru
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
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