Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-08-01
著者
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Usami N
Institute For Materials Research (imr) Tohoku University
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Usami Noritaka
Tohoku Univ. Miyagi Jpn
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NAKAGAWA Kiyokazu
Center for Crystal Science and Technology, University of Yamanashi
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Usami Noritaka
Institute For Material Research Tohoku University
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Usami Noritaka
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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CHINZEI Tsuneo
Research Center for Advanced Science and Techonology, University of Tokyo
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FUKATSU Susumu
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Nishida Akio
Central Research Laboratory Hitachi Ltd.
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Nishida A
Central Research Laboratory Hitachi Ltd.
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Fukatsu Shigeto
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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NAKAGAWA Kiyokazu
Central Research Laboratory, Hitachi Ltd.
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Usami Noritaka
Institute For Materials Research (imr) Tohoku University
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Nakagawa Kenichi
Liquid Ctystal Laboratories Sharp Corporation
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Fukatsu S
Univ. Tokyo Tokyo Jpn
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Chinzei Tsuneo
Univ. Tokyo Tokyo Jpn
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Fukatsu Susumu
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo:(present Address
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Nakagawa K
Center For Crystal Science And Technology University Of Yamanashi
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Chinzei Tsuneo
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Nakagawa Kiyokazu
Central Research Laboratory Hitachi Ltd.
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Nakagawa Keisuke
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
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