Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Onabe Kentaro
Department Of Applied Physics The University Of Tokyo
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ITO Ryoichi
Department of Physics, Meiji University
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Miyoshi S
Univ. Tokyo Tokyo Jpn
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YAGUCHI Hiroyuki
Department of Applied Physics, The University of Tokyo
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Oki K
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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MIYOSHI Seiro
Department of Applied Physics, The University of Tokyo
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NAGAHARA Masaki
Department of Applied Physics, The University of Tokyo
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Yaguchi H
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yaguchi Hiroyuki
Department Of Applied Physics The University Of Tokyo
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Ito R
Meiji Univ. Kawasaki
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Ito R
Iwate Univ. Morioka Jpn
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Miyoshi Seiro
Department Of Applied Physics The University Of Tokyo
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Nagahara Masaki
Department Of Applied Physics The University Of Tokyo
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Onabe K
Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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Onabe Kentaro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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