Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
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概要
- 論文の詳細を見る
The oscillator strength of excitons in InGaAs / GaAs single quantum wells is studied for the first time by reflectance measurements using a Fourier transform spectrometer. Decrease of the oscillator strength of the zero phonon line at higher temperatures is found and analyzed using the temperature dependence of a modified Debye-Waller factor with an averaged phonon mode. For a sample of L = 140Å, the oscillator strength is estimated to be 5.1 × 10^<-4> Å^<-2>. The well width dependence of the oscillator strength is found to reach a maximum at a critical well width. We also observe anomalies in the oscillator strength and linewidth at temperatures lower than 50 K.
- 社団法人日本物理学会の論文
- 1993-09-15
著者
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ITO Ryoichi
Department of Physics, Meiji University
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Kano S.
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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ZHANG Baoping
Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN)
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ZHANG Baoping
Research Center for Advanced Science and Technology, The University of Tokyo
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Zhang Baoping
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Koh S
Institute For Solid State Physics University Of Tokyo
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Ito R
Meiji Univ. Kawasaki
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Kano S
Hosei Univ. Tokyo
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Kano S.
IBM Research, Tokyo Research Laboratory
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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