Asymmetric Frequency Response of Semiconductor Laser Amplifiers
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概要
- 論文の詳細を見る
Asymmetry in the frequency response of semiconductor laser amplifiers operating just below lasing threshold is investigated experimentally and theoretically. Frequency response of the amplifier is measured using a transient shift of the oscillation wavelength when the laser is operated in pulsed mode. The observed asymmetry is explained in terms of the refractive index change due to decrease in the active-region carrier density accompanied by optical amplification.
- 社団法人応用物理学会の論文
- 1982-11-20
著者
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OGASAWARA Nagaatsu
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Nakai Tetsuya
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Ogasawara Nagaatsu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Ogasawara Nagaatsu
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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ITO Ryoichi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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