Substrate-Induced Stabilization of GaInPAs Epitaxial Layers on GaAs and InP
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概要
- 論文の詳細を見る
The unstable regions of mixing have been calculated directly for III-V quaternary GaInPAs alloy layers epitaxially grown on GaAs and InP substrates. The lattice mismatch strain energy due to the existence of the substrate has been included in the free energy of the epitaxial material. The result shows that the quaternary GaInPAs epitaxial layers, once grown on GaAs and InP, are stabilized by the existence of the substrates even at low temperatures and the decomposition into two phases may not occur.
- 社団法人応用物理学会の論文
- 1984-01-20
著者
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Ishikawa Masayuki
Department of Applied Bioscience, Faculty of Agriculture, Hokkaido University
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ishikawa Masayuki
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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