Longitudinal Mode Competition and Asymmetric Gain Saturation in Semiconductor Injection Lasers. II. Theory : Waves, Optics and Quantum Electronics
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概要
- 論文の詳細を見る
Gain saturation in semiconductor lasers is analyzed using a density matrix formalism. A refined treatment of the density matrix formalism reveals that nonlinear gain has a component which is asymmetric with respect to the lasting frequency. The asymmetric component originates from refactive-index modulation due to a carrier-density pulsation induced by the optical-intensity beat. Based on the analysis, mode competition behavior is numerically examined using appropriate values of the linewidth enhancement factor and the intraband relaxation time. It is shown that the output power decreases at mode jumping from a shorter to a longer wavelength mode while it increases at mode jumping toward shorter wavelengths. The results agree with the features of the mode competition behavior observed in transverse-mode-controlled AlGaAs lasers.
- 社団法人応用物理学会の論文
- 1988-04-20
著者
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Ogasawara Nagaatsu
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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