GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-30

著者

• Onabe Kentaro

  Department Of Applied Physics The University Of Tokyo

• ITO Ryoichi

  Department of Physics, Meiji University

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• YAGUCHI Hiroyuki

  Department of Applied Physics, The University of Tokyo

• Oki K

  Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer

• TSUJIKAWA Tomoko

  Department of Applied Physics, The University of Tokyo

• MOMMA Keishi

  Department of Electronics Engineering, University of Electro-Communications

• Shiraki Yasuhiro

  School Of Fundamental Science And Technology Keio University

• Yaguchi H

  Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita

• Yaguchi Hiroyuki

  Department Of Applied Physics The University Of Tokyo

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Ito R

  Meiji Univ. Kawasaki

• Ito R

  Iwate Univ. Morioka Jpn

• Ito Ryoichi

  Department Of Applied Physics Faculty Of Engineering The University Of Tokyo

• Momma Keishi

  Department Of Electronics Engineering University Of Electro-communications

• Onabe K

  Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U

• Tsujikawa Tomoko

  Department Of Applied Physics The University Of Tokyo

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Ito Ryoichi

  Department Of Applied Physics Faculty And Engineering University Of Tokyo

• Onabe Kentaro

  Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan

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