Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy
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概要
- 論文の詳細を見る
We have simultaneously determined the carrier concentration, mobility, and thickness of 4H–SiC homoepilayers with carrier concentrations of $10^{17}$–$10^{18}$ cm-3 from infrared reflectance measurements with the wave number range of 80–2000 cm-1. A modified classical dielectric function model was employed for the fitting analyses. We have prepared $n$-type epilayers on $ p$-type and $n$-type substrates for comparison with the values of the carrier concentration and mobility estimated from infrared reflectance measurements with those obtained from Hall-effect measurements and $C$–$V$ measurements. Through these comparisons, we have confirmed the validity of the values estimated from infrared reflectance measurements.
- Japan Society of Applied Physicsの論文
- 2006-12-25
著者
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Yoshida Sadafumi
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yaguchi H
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Hijikata Yasuto
Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Sa
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Yaguchi Hiroyuki
Division of Mathematics, Electronics and Informatics, Graduate School of Science and Engineering, Sa
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Oishi Shingo
Division of Mathematics, Electronics and Information, Saitama University, 255 Shimo-Okubo, Sakura-ku
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Hijikata Yasuto
Saitama University Saitama-shi
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Hijikata Yasuto
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Oishi Shingo
Division Of Mathematics Electronics And Information Saitama University
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Yoshida S
Sharp Corp. Nara Jpn
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Yaguchi Hiroyuki
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saitama University
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