Shiraki Y | Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

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概要

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著作論文

Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ進展する窒化物半導体光・電子デバイスの現状,及び一般)
Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
Formation of Tensilely Strained Germanium-on-Insulator

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