Myronov Maksym | Advanced Research Laboratories Musashi Institute Of Technology

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概要

• MYRONOV Maksymの詳細を見る
• 同名の論文著者
• Advanced Research Laboratories Musashi Institute Of Technologyの論文著者

関連著者

• Myronov Maksym

  Advanced Research Laboratories Musashi Institute Of Technology

• Shiraki Yasuhiro

  School Of Fundamental Science And Technology Keio University

• ITOH Kohei

  Department of Applied Physics and Physico-Informatics, Keio University

• Itoh Kohei

  Keio Univ. Yokohama Jpn

• Shiraki Yasuhiro

  Department Of Applied Physics And Physico-informatics Keio University

• Sawano Kentarou

  Tokyo City Univ. Tokyo Jpn

• Itoh Kohei

  Department Of Applied Physics And Physico-informatics And Crest-jst Keio University

• SAWANO Kentarou

  Advanced Research Laboratories, Musashi Institute of Technology

• Itoh Kohei

  Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan

• SHIRAKI Yasuhiro

  Department of Applied Physics, The University of Tokyo

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Myronov Maksym

  Musashi Inst. Of Technol. Tokyo Jpn

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• SHIRAKI Yasuhiro

  Advanced Research Laboratories, Musashi Institute of Technology

• SAWANO Kentarou

  Musashi Institute of Technology, Advanced Research Laboratories

• SHIRAKI Yasuhiro

  Musashi Institute of Technology, Advanced Research Laboratories

• MYRONOV Maksym

  Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Techn

• Shiraki Yasuhiro

  Advanced Research Laboratories Musashi Institute Of Technology

• Sawano Kentarou

  Research Center For Silicon Nano-science Advanced Research Laboratories Tokyo City University

• Shiraki Yasuhiro

  Musashi Institute Of Technology Research Center For Silicon Nano-science

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著作論文

• Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
• Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
• Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
• Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate

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