Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-02-15

著者

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Myronov Maksym

  Advanced Research Laboratories Musashi Institute Of Technology

• Shiraki Yasuhiro

  School Of Fundamental Science And Technology Keio University

• MYRONOV Maksym

  Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Techn

関連論文

• Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
• Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
• Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
• Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
• Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
• High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
• New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
• Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
• High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
• Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
• Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
• The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
• Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
• Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
• Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
• Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
• On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
• Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
• Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
• Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
• Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
• Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
• Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
• Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
• Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
• Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
• Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
• MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation
• Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
• Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
• Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
• Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
• Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
• Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
• Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
• Photoluminescence of Erbium Implanted in SiGe
• Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
• Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
• Optical Properties of Excitons in Semiconductor Quantum Wells
• Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
• Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
• Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
• Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
• Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
• Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
• The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
• Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
• Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells
• Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate

もっと見る 閉じる

スポンサーリンク