Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-01
著者
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Usami N
Institute For Materials Research (imr) Tohoku University
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Usami Noritaka
Tohoku Univ. Miyagi Jpn
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Usami Noritaka
Institute For Material Research Tohoku University
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Usami Noritaka
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Sunamura Hiroshi
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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FUKATSU Susumu
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Fukatsu Shigeto
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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NAYAK Deepak
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Usami Noritaka
Institute For Materials Research (imr) Tohoku University
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Nayak Deepak
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Fukatsu S
Univ. Tokyo Tokyo Jpn
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Fukatsu Susumu
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo:(present Address
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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