Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
著者
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Usami Noritaka
Institute For Material Research Tohoku University
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Saito Takanobu
Institute For Materials Research
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Toko Kaoru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Khan Muhammad
Institute of Industrial Science, The University of Tokyo
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Du Weijie
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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