Wet Chemical Etching and X-ray Photoelectron Spectroscopy Analysis of BaSi2 Epitaxial Films Grown by Molecular Beam Epitaxy

概要

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Approximately 250-nm-thick undoped n-type BaSi2 epitaxial films were grown on n-Si(111) substrates by molecular beam epitaxy, and 1-mm-diameter mesa-isolated n-BaSi2/n-Si diode structures were successfully produced by wet chemical etching. Etching of BaSi2 layers was carried out using diluted hydrochloric acid solution, followed by diluted hydrofluoric acid solution. X-ray photoelectron spectroscopy measurements revealed that the surface of BaSi2 was changed to Si oxides by treatment with the hydrochloric solution, and these oxides were then etched away by the hydrofluoric solution. The surface morphology of samples was significantly dependent on the ratio of H2O included in the etching solutions. Lower ratios of H2O resulted in rougher sample surfaces. Wet chemical etching of BaSi2 layers was successfully carried out by first using $\text{HCl}:\text{H$_{2}$O} = 1:199$ and then $\text{HF}:\text{H$_{2}$O} = 1:49$ solutions at 0 °C.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-10-25