Negative Anisotropic Magnetoresistance in \gamma'-Fe4N Epitaxial Films on SrTiO3(001) Grown by Molecular Beam Epitaxy
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概要
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We observed the negative anisotropic magnetoresistance (AMR) effect in \gamma'-Fe4N epitaxial films grown on SrTiO3(001) substrates using molecular beam epitaxy. The AMR ratio was increased immediately below 50 K. The angular dependence of AMR ratio contained not only \cos 2\theta but also \cos 4\theta components, and the sign of Fourier coefficient of \cos 4\theta term was changed around 10 K. These behaviors are in good agreement with those already reported for \gamma'-Fe4N pseudo-single-crystal films on MgO(001) substrates formed by sputtering. These behaviors might be attributed to temperature dependence of electronic or magnetic structure specific to \gamma'-Fe4N.
- 2012-06-25
著者
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Tsunoda Masakiyo
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Toko Kaoru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Ito Keita
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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TAKAHASHI Hirokazu
Department of Agricultural Chemistry, Faculty of Agriculture, Tohoku University
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Takahashi Hirokazu
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Kabara Kazuki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Sanai Tatsunori
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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