Cubic Dominant GaN Growth on (OO1) GaAs Substrates by Hydride Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-01-15
著者
-
SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
-
HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
-
Tsuchiya H
Toshiba Corp. Kawasaki Jpn
-
TSUCHIYA Harutoshi
Institute of Materials Science, University of Tsukuba
-
SUNABA Kenji
Institute of Materials Science, University of Tsukuba
-
YONEMURA Syogo
Institlite of Materials Science, University of Tsukuba
-
Sunaba Kenji
Institute Of Applied Physics University Of Tsukuba
-
Tsuchiya Harutoshi
Institute Of Materials Science University Of Tsukuba
-
SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
-
HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
-
TSUCHIYA Harutoshi
Institlite of Materials Science, University of Tsukuba
-
SUNABA Kenji
Institlite of Materials Science, University of Tsukuba
関連論文
- ナノスケールMOSFETの電流駆動力に関するキャリア散乱の影響(プロセス・デバイス・回路シミュレーション及び一般)
- Structural Analysis of Collagen Fibrils in Rat Skin Based on Small-Angle X-Ray-Diffraction Pattern
- Observation on the Crimp Structure in Rat Tail Tendon Using a Transmission Electron Microscope
- 小角X線回折法とエネルギ-計算による,ネズミの尾の腱のコラ-ゲン繊維の構造解析
- ナノスケールMOSFETのバリスティック輸送特性(プロセス・デバイス・回路シミュレーション及び一般)
- ナノスケールMOSFETのバリスティック輸送特性(プロセス・デバイス・回路シミュレーション及び一般)
- ナノスケールMOSFETの電流駆動力に関するキャリア散乱の影響(プロセス・デバイス・回路シミュレーション及び一般)
- ナノスケールDG-MOSFETの擬似バリスティック量子輸送特性(プロセス・デバイス・回路シミュレーション及び一般)
- ナノスケールDG-MOSFETの擬似バリスティック量子輸送特性(プロセス・デバイス・回路シミュレーション及び一般)
- 準バリスティックMOSFETのゲートオーバーラップ効果(プロセス・デバイス・回路・シミュレーション及び一般)
- 準バリスティックMOSFETのゲートオーバーラップ効果(プロセス・デバイス・回路シミュレーション及び一般)
- モンテカルロシミュレーションにおける量子力学的補正(プロセス・デバイス・回路シミュレーション及び一般)
- モンテカルロシミュレーションにおける量子力学的補正(プロセス・デバイス・回路シミュレーション及び一般)
- 極微細MOSFETの量子デバイスシミュレーション
- 極微細MOSFETの量子デバイスシミュレーション
- 極微細MOSFETの量子デバイスシミュレーション
- Nonequilibrium Quantum Transport of a Semiconductor Quantum Dot Controlled by Gate Voltage
- Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
- 自然乾燥コラ-ゲン繊維に関する透過型電子顕微鏡像の定量的解析〔英文〕
- Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
- Band Diagrams of BaSi_2/Si Structure by Kelvin Probe and Current-Voltage Characteristics
- Optical Absorption Edge of Ternary Semiconducting Silicide Ba_Sr_xSi_2
- Epitaxial Growth of Semiconducting BaSi_2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
- Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
- Epitaxial Growth of Semiconducting BaSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
- Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
- Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
- Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region
- Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
- Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
- On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
- Formation of β-FeSi_2 Layers on Si(001) Substrates
- 量子補正モンテカルロシミュレーションによる非Si材料nチャネルMOSFETの電流駆動力評価(プロセス・デバイス・回路シミュレーション及び一般)
- 量子補正モンテカルロシミュレーションによる非Si材料nチャネルMOSFETの電流駆動力評価(プロセス・デバイス・回路シミュレーション及び一般)
- Quantum Electron Transport Modeling in Nano-Scale Devices
- 量子補正力を考慮したモンテカルロデバイスシミュレーション
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Static and Dynamic Electron Transport in Resonant-Tunneling Diodes
- Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
- Cubic Dominant GaN Growth on (OO1) GaAs Substrates by Hydride Vapor Phase Epitaxy
- Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
- Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
- Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
- Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
- Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
- Low Carbon Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs Using Dimethylamine Gallane
- Growth Condition Dependence of Carbon Reduction in GaAs Chemical Beam Epitaxy Using Trisdimethylamimo-Arsine and Trimethylgallium
- Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
- Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
- Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
- Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers
- Preferential PtSi Formation in Thermal Reaction between Pt and Si_Ge_ MBE Layers
- Reduction of the Barrier Height of Silicide/p-Si_Ge_x Contact for Application in an Infrared Image Sensor
- Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
- Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
- Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
- Time-Resolved Photoluminescence Study of Si/β-FeSi_2/Si Structures Grown by Molecular Beam Epitaxy
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
- Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
- Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
- Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
- Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
- Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
- Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
- Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
- Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
- Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
- Passivation Properties of Plasma CVD AlN Films for GaAs
- Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
- Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
- Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl_3 with AsH_3/H_2 : Semiconductors and Semiconductor Devices
- Effect of Introducing $\beta$-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-$\beta$-FeSi2/n-Si Heterointerface
- CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe_3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers
- In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
- Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
- Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
- 量子井戸レーザにおけるキャリア量子輸送の利得に及ぼす影響
- Epitaxial Growth of Ferromagnetic Fe_3Si Films on CaF_2/Si(111) by Molecular Beam Epitaxy
- Layer-by-Layer Growth of GaN on GaAs Substrates by Alternate Supply of GaCl_3 and NH_3
- Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN
- Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
- Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy
- Fabrication and Current–Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
- Growth of Nitride-Based Fe3N/AlN/Fe4N Magnetic Tunnel Junction Structures on Si(111) Substrates
- Reactive Ion Etching of $\beta$-FeSi2 with Inductively Coupled Plasma
- Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
- Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)