Fabrication and Current–Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
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概要
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The possibility of selective wet chemical etching and the current–voltage characteristics ($I$–$V$) of Fe3Si (9 nm)/CaF2 (2 nm)/Fe3Si (13 nm) magnetic-tunnel-junctions structures have been investigated. It was found that the Fe3Si and CaF2 layers were selectively etched using a mixture of hydrofluoric and nitric acids ($\text{HF}:\text{HNO$_{3}$}:\text{H$_{2}$O} = 1:2:400$) and a sulfuric solution ($\text{H$_{2}$SO$_{4}$}:\text{H$_{2}$O} = 1:20$), respectively. The etch rates were 120 and 45 nm/min at 0 °C for Fe3Si and CaF2, respectively. The $I$–$V$ characteristics measured at room temperature were well fitted to Simmons’ equation within the bias voltages of $\pm 0.3$ V using the barrier height $\Phi = 2.5$ eV and barrier thickness $d = 2.0$ nm.
- 2008-08-25
著者
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Sadakuni Kenji
Institute Of Applied Physics University Of Tsukuba
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Harianto Teddy
Institute Of Applied Physics University Of Tsukuba
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Akinaga Hiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Harianto Teddy
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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