Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes

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概要

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• 200-nm-diameter CaF2 (5 nm)/Fe3Si/CaF2 (5 nm) ferromagnetic resonant tunneling diodes (FM-RTDs) were fabricated on a Si(111) substrate through SiO2 hole arrays by selective-area molecular beam epitaxy. Fe3Si quantum-well width (d) values of 4, 5, and 8 nm were used. The current density versus voltage (J--V) characteristics were measured at room temperature and the peak-voltage separations in d^{2}J/dV^{2}--V plots were found to be inversely proportional to d^{2}. This result implies that resonant tunneling occurs in the FM-RTDs.

• 2011-10-25

著者

• Akinaga Hiro

  National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn

• Suzuno Mitsushi

  Institute Of Applied Physics University Of Tsukuba

• Sadakuni-Makabe Kenji

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Harada Kazunori

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Suzuno Mitsushi

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

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