Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Cr-doped GaN films with Cr concentration up to 5 at.% were epitaxially grown on Si(111) substrates by metal organic molecular beam epitaxy (MOMBE). Any secondary phases were not detected by X-ray diffraction. It was found from a superconducting quantum interference device (SQUID) magnetometer that the Cr-doped GaN films with Cr concentration up to 3 at.% showed ferromagnetic behavior and the Curie temperature of the films exceeded 350 K. However, no such ferromagnetic behavior was detected by magnetic circular dichroism (MCD) measurements. These results indicate that observed ferromagnetism is not attributed to Cr-doped GaN, but to unidentified ferromagnetic precipitates included in the grown layers.
- Japan Society of Applied Physicsの論文
- 2004-10-01
著者
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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TOMIOKA Hiroyuki
Institute of Applied Physics, University of Tsukuba
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Yoshizaki Ryozo
Institute Of Appl. Phys. Univ. Of Tsukuba
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Yui Tatsuya
Institute Of Applied Physics University Of Tsukuba
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Yamaguchi Kimiaki
Institute Of Applied Physics University Of Tsukuba
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Ando Koji
Nanoelectronics Research Institute Aist
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Ando Koji
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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