Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current–Voltage Characteristics
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概要
- 論文の詳細を見る
The band diagrams of the BaSi2/Si heterostructure were investigated using a Kelvin probe and its current–voltage ($I$–$V$) characteristics. Ga-doped $n$-type degenerate BaSi2 was grown on Si(111) by molecular beam epitaxy (MBE), and its work function, which is almost the same as its electron affinity, was evaluated to be approximately 3.2 eV by a Kelvin probe. A distinct rectifying behavior was observed in the $I$–$V$ characteristics of isotype $n$-BaSi2/$n$-Si diodes due to an energy barrier for electrons traversing from $n$-Si to $n$-BaSi2.
- Japan Society of Applied Physicsの論文
- 2006-06-25
著者
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Saida Morihiko
Institute Of Applied Physics University Of Tsukuba
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Morita Kousuke
Institute Of Applied Physics University Of Tsukuba
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Kobayashi Michitaka
Institute Of Applied Physics University Of Tsukuba
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Sasaki Masahiro
Institute Of Applied Physics And Center For Tsukuba Advanced Research Alliance University Of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Suemasu Takashi
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Saida Morihiko
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Morita Kousuke
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Sasaki Masahiro
Institute of Applied Physics and Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Sasaki Masahiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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