Optical Absorption Properties of BaSi2 Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We have grown 100-nm-thick BaSi2 films on transparent silicon-on-insulator (SOI) substrates using molecular beam epitaxy, for optical absorption measurements. The SOI substrate has a 0.7-μm-thick (111)-oriented Si layer on top of a fused silica substrate. Reflection high-energy electron diffraction and \theta--2\theta X-ray diffraction patterns showed that a-axis-oriented BaSi2 layers were grown epitaxially. The absorption spectrum of the film measured in a transmission configuration at room temperature revealed that BaSi2 has a large absorption coefficient of 3 \times 10^{4} cm-1 at 1.5 eV and an indirect optical absorption edge of 1.34 eV.
- The Japan Society of Applied Physicsの論文
- 2011-06-25
著者
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Toh Katsuaki
Institute Of Applied Physics University Of Tsukuba
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Saito Takanobu
Institute For Materials Research
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Toh Katsuaki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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