Toh Katsuaki | Institute Of Applied Physics University Of Tsukuba

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• 同名の論文著者
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関連著者

• Toh Katsuaki

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• Usami Noritaka

  Institute For Material Research Tohoku University

• Saito Takanobu

  Institute For Materials Research

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• USAMI Noritaka

  Institute for Materials Research, Tokoku University

• Usami Noritaka

  Institute Of Materials Research Tohoku University

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• OKADA Atsushi

  Institute of Applied Physics, University of Tsukuba

• SAITO Takanobu

  Institute of Applied Physics, University of Tsukuba

• TOH Katsuaki

  Institute of Applied Physics, University of Tsukuba

• Khan M.

  Institute of Applied Physics, University of Tsukuba

• Okada Atsushi

  Institute Of Applied Physics University Of Tsukuba

• Saito Takanobu

  Institute Of Applied Physics University Of Tsukuba

• Khan M.

  Institute Of Applied Physics University Of Tsukuba

• Toh Katsuaki

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Hara Kosuke

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Saito Noriyuki

  Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan

• Yoshizawa Noriko

  Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan

• Toko Kaoru

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Suemasu Takashi

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

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著作論文

• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
• Optical Absorption Properties of BaSi2 Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy

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