Hara Kosuke | Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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概要
- Hara Kosuke O.の詳細を見る
- 同名の論文著者
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japanの論文著者
関連著者
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Usami Noritaka
Institute For Material Research Tohoku University
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Hara Kosuke
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Toko Kaoru
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan
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Suemasu Takashi
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan
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Toh Katsuaki
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Shiraki Yasuhiro
Advanced Research Laboratories Musashi Institute Of Technology
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Toh Katsuaki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Saito Noriyuki
Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Yoshizawa Noriko
Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Toko Kaoru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hoshi Yusuke
Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan
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Suzuno Mitsushi
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Suemasu Takashi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Shiraki Yasuhiro
Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan
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Toh Katsuaki
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
著作論文
- Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
- Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate (Special Issue : Photovoltaic Science and Engineering)
- Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature