Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films

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概要

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• We have investigated the effects of BF2 ion implantation and subsequent annealing on the structure of epitaxial BaSi2 thin films with the aim of the fabrication of a p-type B-doped BaSi2 film. After 10 min of annealing at 600 °C and above, BaSi2 is lost at least partly accompanied by appearance of Si as evidenced by X-ray diffraction and Raman spectroscopy. Element mapping by energy dispersive X-ray spectroscopy revealed that a barium oxide is formed on the surface, which indicates that BaSi2 is oxidized into a barium oxide and Si during annealing. Such oxidation was found to be suppressed by employing rapid thermal annealing for 30 s even when the annealing temperatures of 700 and 800 °C were chosen. Analysis of the full width at half maximum of the Raman peak showed that the inhomogeneous stress in the film produced by ion implantation can be decreased to the as-grown level by rapid thermal annealing at 700 and 800 °C for 30 s. At the same time, the red shift of the Raman peak is shown, based on which the possibility of B substitution for Si is discussed.

• 2011-12-25

著者

• Usami Noritaka

  Institute For Material Research Tohoku University

• Shiraki Yasuhiro

  Advanced Research Laboratories Musashi Institute Of Technology

• Hara Kosuke

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Hoshi Yusuke

  Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan

• Suzuno Mitsushi

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Toko Kaoru

  Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan

• Suemasu Takashi

  Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan

• Shiraki Yasuhiro

  Advanced Research Laboratories, Tokyo City University, Setagaya, Tokyo 158-0082, Japan

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