High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition

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概要

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• Polycrystalline silicon (poly-Si) films with a thickness over 1 μm are formed by the flash lamp annealing (FLA), with a duration of less than 10 ms, of precursor amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) on quartz substrates. Thicker a-Si films can be crystallized under lower lamp irradiance, which can be understood by considering both the total generated heat in the a-Si films and the thermal diffusion into the quartz substrates. Results of microwave photoconductivity decay (μ-PCD) measurement indicate that high-pressure water vapor annealing (HPWVA) is effective for improving the minority carrier lifetime of the poly-Si films. The film with a thickness of 1.5 μm crystallized under a high lamp irradiance shows minority carrier lifetimes over 5 μs, indicating the high feasibility of applying the crystalline film to high-efficiency thin-film solar cells.

• The Japan Society of Applied Physicsの論文
• 2007-11-15

著者

• Matsumura Hideki

  Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn

• Ohdaira Keisuke

  Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn

• Usami Noritaka

  Institute For Material Research Tohoku University

• Nakajima Kazuo

  Institute For Materials Research (imr) Tohoku University

• Usami Noritaka

  Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Ohdaira Keisuke

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Fujiwara Tomoko

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Endo Yohei

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Nishizaki Shogo

  Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Nakajima Kazuo

  Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Nakajima Kazuo

  Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan

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