Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
スポンサーリンク
概要
- 論文の詳細を見る
Polycrystalline silicon (poly-Si) films 4.5 μm thick, formed on glass substrates by flash lamp annealing (FLA) of precursor amorphous Si (a-Si) films, show remarkably long minority carrier lifetimes of approximately 100 μs after post-furnace annealing under N_2 ambient. Even after crystallization by FLA, there remain a large number of H atoms, on the order of 1^<21>/cm^3, which probably effectively act to passivate dangling bonds in the poly-Si films. A minority carrier diffusion length of approximately 60 μm, estimated using the lifetime value, indicates high feasibility of realizing thin-film solar cells using this material.
- The Japan Society of Applied Physicsの論文
- 2009-06-25
著者
-
Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
-
Ohdaira Keisuke
Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn
-
Shiba Kazuhiro
Japan Advanced Institute Of Science And Technology (jaist)
-
TAKEMOTO Hiroyuki
Japan Advanced Institute of Science and Technology (JAIST)
-
Matsumura Hideki
Japan Advanced Institute Of Science And Technology (jaist)
関連論文
- Selection of material for the back electrodes of thin-film solar cells using polycrystalline silicon films formed by flash lamp annealing (Special issue: Solid state devices and materials)
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Study on stability of amorphous silicon thin-film transistors prepared by catalytic chemical vapor deposition
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- Theoretical Study for Drastic Improvement of Solar Cell Efficiency
- Catalytic CVD processes of oxidizing species and the prevention of oxidization of heated tungsten filaments by H₂
- Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
- Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
- Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
- Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
- Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
- Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
- Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
- Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
- Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
- Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
- Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
- Optical Absorption Properties of Indium-Doped Thin Crystalline Silicon Films
- Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process
- Effective Interaction for the Jastrow Model Wave Function with the Transcorrelated Method(Nuclear Physics)
- Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
- Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
- Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- Coating techniques of metal chambers for remote catalytic chemical vapor deposition applications
- Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition
- Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
- Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals
- Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Moisture-Resistive Properties of SiNx Films Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays
- Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing