Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-15
著者
-
Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
-
Heya Akira
Department Of Materials Science & Chemistry University Of Hyogo
-
Kawamoto N
Department Of Electrical And Electronic Engineering Yamaguchi University
-
Matsumura Hideki
Japan Advanced Institute Of Science And Technology (jaist)
-
HEYA Akira
University of Hyogo
-
MATSUO Naoto
University of Hyogo
-
KAWAMOTO Naoya
Yamaguchi University
-
Matsumura Hideki
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
-
Matsuo N
Department Of Materials Science & Chemistry University Of Hyogo
-
Matsuo Naoto
Univ. Hyogo Hyogo
関連論文
- Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing
- Theoretical Study for Drastic Improvement of Solar Cell Efficiency
- Catalytic CVD processes of oxidizing species and the prevention of oxidization of heated tungsten filaments by H₂
- Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
- Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
- Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
- Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
- Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
- Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
- Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
- Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
- Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
- Enhancement of secondary grain growth of low-temperature polycrystalline silicon by visible laser irradiation: visible-laser-induced lateral crystallization (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materia
- Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization
- Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
- Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing - Dependences of Poly-Si Grain on Energy Density and Shot Number -
- Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing
- Extension of Physical Limit of Conventional Metal-Oxide-Semiconductor Transistor by Double Barriers Formed at the Channel Edges
- Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
- Analysis of Direct Tunneling for Thin SiO_2 Film
- Analysis of Direct Tunneling for Thin SiO_2 Film
- Influence of Microroughness of Si and Native Oxide on Adsorption of Organic Carbon in Water
- Thermoluminescence of light and X-ray irradiated semiconductor-doped glasses
- Thermoluminescence of Photodarkened CdS-Doped Glasses
- Effects of glass composition on photodarkening in CdS-doped glasses
- Influence of microcrystallite size on photodarkening effects in CdS-doped glasses
- Dependence of photodarkening on alloy composition of CdSxSe_＜1-x＞ nanocrystals in glasses
- Laser-induced reversion of photodarkening in CdS-doped glass
- Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
- Optical Absorption Properties of Indium-Doped Thin Crystalline Silicon Films
- Internal Stress in Polycrystalline Si Film Recrystallized by Excimer Laser Annealing
- Effect of Hydrogen and Thermal Conductivity on Nucleation of Polycrystalline Si by Excimer Laser Annealing
- Grain Morphology of Recrystallized Polycrystalline-Si Film by Excimer Laser Annealing
- Characteristics of Recrystallized poly-Si Film Prepared by ELA of a-Si Deposited on SiO2 / SiN / Glass Using PE-CVD Method
- Characterization of Poly-Silicon Film Prepared by Excimer Laser Annealing
- Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process
- Effective Interaction for the Jastrow Model Wave Function with the Transcorrelated Method(Nuclear Physics)
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- Influence of laser plasma soft X-ray irradiation on crystallization of a-Si film by infrared furnace annealing
- Silicon Resonant Tunneling Metal-Oxide-Semiconductor Transistor for Sub-0.1μm Era(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
- Nanometer Pattern-Mask Fabricated by Conventional Photolithography
- Excimer Laser Annealing of Hydrogen Modulation Doped a-Si Film
- Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen
- Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
- Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- Coating techniques of metal chambers for remote catalytic chemical vapor deposition applications
- Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Behavior of Hydrogen in Excimer Laser Annealing of Hydrogen-Modulation-Doped Amorphous Silicon Layer
- Properties of Surface-Modification Layer Generated by Atomic Hydrogen Annealing on Poly(ethylene naphthalate) Substrate
- Hydrogen Modulation-Doped Structures to Improve Crystalline Fraction of Polycrystalline Silicon Films Prepared by Excimer Laser Annealing at Low Energy Densities
- Surface Modification of Poly(ethylene naphthalate) Substrate and Its Effect on SiNx Film Deposition by Atomic Hydrogen Annealing
- Surface Treatment of Plastic Substrates using Atomic Hydrogen Generated on Heated Tungsten Wire at Low Temperatures
- Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition
- Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
- Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals
- Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Moisture-Resistive Properties of SiNx Films Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays