Excimer Laser Annealing of Hydrogen Modulation Doped a-Si Film
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2007-05-01
著者
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Heya Akira
Department Of Materials Science & Chemistry University Of Hyogo
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Kawamoto N
Department Of Electrical And Electronic Engineering Yamaguchi University
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HEYA Akira
University of Hyogo
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MATSUO Naoto
University of Hyogo
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KAWAMOTO Naoya
Yamaguchi University
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Matsuo N
Department Of Materials Science & Chemistry University Of Hyogo
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Matsuo Naoto
Univ. Hyogo Hyogo
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SERIKAWA Tadashi
Osaka University
関連論文
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- Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization
- Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
- Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing - Dependences of Poly-Si Grain on Energy Density and Shot Number -
- Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing
- Extension of Physical Limit of Conventional Metal-Oxide-Semiconductor Transistor by Double Barriers Formed at the Channel Edges
- Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
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