Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing

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概要

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•   The effects of high nitrogen (N2) pressure and thermal treatment on the adhesion between a silicon film and a polyethersulfone (PES) substrate during crystallization by excimer laser annealing (ELA) were investigated using silicon nitride (SiNx) as the barrier film for the fabrication of polycrystalline silicon (poly-Si) thin-film transistors on a plastic substrate. As the thickness of the SiNx film increased from 50 to 150 nm at a gas pressure of 0.2 MPa, film exfoliation was suppressed. A poly-Si film with a crystalline fraction of 76% was obtained at an energy density of 200 mJ/cm2 and a high pressure in N2 atmosphere. In addition, thermal treatment before ELA was useful for improving the adhesion between the inorganic film and the PES substrate.

著者

• MATSUO Naoto

  Department of Materials Science & Chemistry, University of Hyogo

• HEYA Akira

  Department of Materials Science & Chemistry, University of Hyogo

• KAWAMOTO Naoya

  Department of Electrical and Electronic Engineering, Yamaguchi University

• MATSUMURA Hideki

  School of Materials Science, Japan Advanced Institute of Science and Technology

• Kawamoto N

  Department Of Electrical And Electronic Engineering Yamaguchi University

• NISHIZAKI Shogo

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

• OHDAIRA Keisuke

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

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