Crystallization of Si
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概要
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The effect of soft X-ray irradiation on the crystallization of a Si<inf>1-x</inf>Ge<inf>x</inf>multilayer was investigated for the realization of low-temperature crystallization. This method is influenced by the Ge concentration and photon flux density by adjusting the photon energy to the optimum value related with the Ge 3d electron orbital. The Ge atom was a trigger for the crystallization because the atomic migration of Ge atoms was enhanced by electron excitation during soft X-ray irradiation. For the Si<inf>1-x</inf>Ge<inf>x</inf>multilayer, the crystallization region can be controlled by varying the Ge concentration. The present crystallization technique can be applied to the fabrication of solar cells with high conversion efficiency.
- 2013-06-25
著者
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HEYA Akira
Department of Materials Science & Chemistry, University of Hyogo
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Takahashi Makoto
Joining And Welding Research Institute Osaka University
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Kanda Kazuhiro
LASTI, Graduate School of Science, University of Hyogo, 3-1-2 Koto, Kamigori, Hyogo 678-1205, Japan
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Matsuo Naoto
Department of Electrical & Electronic Engineering, Yamaguchi University
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Matsuo Naoto
Department of Materials Science and Chemistry, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Ito Kazuhiro
Joining and Welding Research Institute, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Takahashi Makoto
Joining and Welding Research Institute, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Kanda Kazuhiro
LASTI, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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