Effect of Hydrogen and Thermal Conductivity on Nucleation of Polycrystalline Si by Excimer Laser Annealing
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概要
- 論文の詳細を見る
The influence of hydrogen on the nucleation of polycrystalline Si (poly-Si) during excimer laser annealing (ELA) of amorphous silicon (a-Si) films was investigated in detail. The results of Raman spectroscopy reveal that the internal stress and defect density in the poly-Si films strongly depend on substrate structures which are made of quartz, SiO2/SiN/glass and SiO2/glass. From the thermal-desorption spectrum and surface morphology characterization using scanning electron microscopy (SEM), it was clarified that the origin of the difference is due to both the hydrogen incorporated in the a-Si from the SiN film by diffusion via SiO2 and the thermal conductivity of the SiO2, SiN and quartz. We also discuss the nucleation process taking into account the hydrogen burst and the thermal conductivity of the substrates.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
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HASEGAWA Isao
Materials and Devices Development Center, SANYO Electric Co., Ltd.
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YAMANO Koji
Materials and Devices Development Center, SANYO Electric Co., Ltd.
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Hamada Hiroki
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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Kawamoto Naoya
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsuo Naoto
Department Of Electrical And Electronic Engineering Yamaguchi University
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Anwar Fakhrul
Department Of Electrical And Electronic Engineering Yamaguchi University
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Abe Hisashi
Materials And Devices Development Center Sanyo Electric Co. Ltd.
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Hamada Hiroki
Materials and Devices Development Center, SANYO Electric Co., Ltd., 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu 503-0195, Japan
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Matsuo Naoto
Department of Electrical & Electronic Engineering, Yamaguchi University
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Matsuo Naoto
Department of Material Engineering, Himeji Institute of Technology, Shosha 2167, Himeji 671-2201, Japan
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Anwar Fakhrul
Department of Electrical and Electronic Engineering, Yamaguchi University, Tokiwadai 2-16-1, Ube 755-8611, Japan
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Hasegawa Isao
Materials and Devices Development Center BU, SANYO Electric Co., Ltd., 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu 503-0195, Japan
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Hasegawa Isao
Materials and Devices Development Center, SANYO Electric Co., Ltd., 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu 503-0195, Japan
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Yamano Koji
Materials and Devices Development Center BU, SANYO Electric Co., Ltd., 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu 503-0195, Japan
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Yamano Koji
Materials and Devices Development Center, SANYO Electric Co., Ltd., 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu 503-0195, Japan
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Abe Hisashi
Materials and Devices Development Center, SANYO Electric Co., Ltd., 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu 503-0195, Japan
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Kawamoto Naoya
Department of Electrical & Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube 755-8611, Japan
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