Extension of Physical Limit of Conventional Metal-Oxide-Semiconductor Transistor by Double Barriers Formed at the Channel Edges
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-15
著者
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Hamada H
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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MATSUO Naoto
Department of Materials Science & Chemistry, University of Hyogo
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MIURA Takashi
Department of Cardiovascular Surgery, The Heart Institute of Japan, Tokyo Women's Medical University
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Miyoshi Tadaki
Department Of Electrical And Electronic Engineering Yamaguchi University
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Miyoshi Tadaki
Department Of Electrical And Electronic Engineering
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HAMADA Hiroki
Microelectronics Research Center, SANYO Electric Co., Ltd.
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YAMAUCHI Junya
Department of Electrical & Electronic Engineering, Yamaguchi University
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KITAGAWA Yasunori
Department of Electrical & Electronic Engineering, Yamaguchi University
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Hamada Hiroki
Microelectronics Research Center Sanyo Electric Co. Lid.:(present Address) Microelectronics Research
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Mochizuki Takayasu
Laboratory Of Advanced Science And Technology For Industry (lasti) University Of Hyogo
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Miura Takashi
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Matsuo N
Department Of Materials Science & Chemistry University Of Hyogo
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Matsuo Naoto
Univ. Hyogo Hyogo
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Matsuo Naoto
Department Of Electrical And Electronic Engineering Yamaguchi University
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Yamauchi Junya
Department Of Electrical & Electronic Engineering Yamaguchi University
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Miyoshi T
Department Of Electrical And Electronic Engineering Yamaguchi University
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Kitagawa Yasunori
Department Of Electrical & Electronic Engineering Yamaguchi University
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Miura Takashi
Department Of Anatomy And Developmental Biology Graduate School Of Medicine Kyoto University
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Matsuo Naoto
Department of Electrical & Electronic Engineering, Yamaguchi University
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Miyoshi Tadaki
Department of Electrical & Electronic Engineering, Yamaguchi University
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HAMADA Hiroki
Microelectronics Resarth Center,SANYO Electric Co.,Lyd
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