Time-resolved luminescence spectra of porous Si
スポンサーリンク
概要
- 論文の詳細を見る
Time-resolved luminescence spectra of porous Si were measured under an N_2 laser excitation. The luminescence shows a nonexponential decay with an initial time constant of less than 5 ns and more than 200 ns for the secondary decay. The luminescence is considered to be associated with localized states, which are probably conduction and valence sublevels in Si microstructures.
- 社団法人応用物理学会の論文
- 1992-08-15
著者
-
Miyoshi Tadaki
Department Of Electrical And Electronic Engineering Yamaguchi University
-
Lee K‐s
Lg Siltron Inc. Kyungbuk Kor
-
Miyoshi Tadaki
Department Of Electrical And Electronic Engineering
-
Aoyagi Yoshinobu
Riken
-
LEE Kyu-Seok
RIKEN
-
Miyoshi Tadaki
Department of Electrical & Electronic Engineering, Yamaguchi University
関連論文
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- Photodarkening and photobrightening in glasses doped with CdS and CdS_xSe_＜1-x＞nanocrystals
- Growth of Polycrystalline Silicon Grains
- Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization
- Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
- Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing - Dependences of Poly-Si Grain on Energy Density and Shot Number -
- Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing
- Extension of Physical Limit of Conventional Metal-Oxide-Semiconductor Transistor by Double Barriers Formed at the Channel Edges
- Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
- Analysis of Direct Tunneling for Thin SiO_2 Film
- Analysis of Direct Tunneling for Thin SiO_2 Film
- Influence of Microroughness of Si and Native Oxide on Adsorption of Organic Carbon in Water
- Thermoluminescence of light and X-ray irradiated semiconductor-doped glasses
- Thermoluminescence of Photodarkened CdS-Doped Glasses
- Thermoluminescence of photodarkened CdS-doped glasses
- Effects of glass composition on photodarkening in CdS-doped glasses
- Photoinduced formation of semiconductor nanocrystals in CdS-doped glasses
- Influence of microcrystallite size on photodarkening effects in CdS-doped glasses
- Transient Characteristics of Luminescence from Barrier-Doped ZnSe:Te-(CdSe)_m(ZnSe)_n Short-Period Superlattice Quantum Well
- CdS-doped glass as dosimetric material with electron spin resonance
- Thermoluminescence of X-ray-irradiated CdS-doped glass
- Dependence of photodarkening on alloy composition of CdSxSe_＜1-x＞ nanocrystals in glasses
- Laser-induced reversion of photodarkening in CdS-doped glass
- Effect of hydrogenation on photodarkening in CdS-doped glass
- Mechanism of Photodarkening Effects in CdS-Doped Glass
- ESR of photodarkened CdS-doped and undoped glasses
- Effects of light irradiation on fluorescence and optical reflectance of pearls
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
- 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
- Electronic Properties of Polysilane Calculated with the Real-Time Real-Space Higher-Order Finite-Difference Method
- Fast Algorithm for Calculating Two-Photon Absorption Spectra by Real-Time Real-Space Higher-Order Finite-Difference Method
- Effects of Surface Roughness and Copper Contamination on the Oxide Breakdown of Silicon Wafer(Semiconductors)
- Observation of Micro-Oxygen Precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and Their Effects on Thin Gate Oxide Breakdown : Semiconductors
- Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Orginated-Pits-free Wafer as a Function of Oxide Thickness
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Inter-Layer Screening Length to Electric Field in Thin Graphite Film
- Coulomb Blockade Oscillations in Narrow Corrugated Graphite Ribbons
- New Etching System with a Large Diameter Using Electron Beam Excited Plasma
- Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
- In Situ Distinction of As-Rich Initial Surfaces by Millisecond Time-Resolved Reflectance Difference
- Thermoluminescence of laser-irradiated Mg_2SiO_4:Tb
- Determination of composition of CdS_xSe_＜1-x＞ microcrystals in semiconductor-doped glasses using Raman scattering
- Transient characteristics of luminescence from CdS-doped glass
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- New High Current Low Energy Ion Source
- Highly Reliable Bottom-Contact Pentacene TFTs with a Poly(p-chloroxylylene) Layer Selectively Grown on a Gate-Insulator
- Alignment-Free Top-Contact Formation for Organic Thin Film Transistors with Submicron-Length Channel
- Path Integral Technique for Inter-Landau Level Tunneling
- Time-resolved luminescence spectra of porous Si
- Evidence for Defect Creation by Light Irradiation in CdSSe-Doped Glass
- Nucleation of Polycrystalline Silicon Grains
- Photoinduced formation of CdSSe nanocrystals in glass
- Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors
- Thermoluminescence of Laser-Irradiated Mg2SiO4:Tb
- Thermoluminescence of X-ray-irradiated CdS-doped glass
- Maskless Ion Implantation of Cerium by Focused Ion Beam : Techniques, Instrumentations and Measurement
- Nano-Device Formation in a Multi-Wall Carbon Nanotube
- Coulomb Blockade Oscillations in Patterned Ultrathin Graphite Films
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System
- Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen
- Suppression of Current Hysteresis in Carbon Nanotube Thin-Film Transistors
- Effect of hydrogenation on photodarkening in CdS-doped glass
- Photoinduced formation of semiconductor nanocrystals in CdS-doped glasses
- Thermoluminescence of photodarkened CdS-doped glasses
- Influence of Microroughness of Si and Native Oxide on Adsorption of Organic Carbon in Water
- Thermoluminescence of X-ray-irradiated CdS-doped glass