Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Orginated-Pits-free Wafer as a Function of Oxide Thickness
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-15
著者
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Yoo H‐d
R&d Center Lg Siltron Inc.
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Lee K‐s
Lg Siltron Inc. Kyungbuk Kor
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Cho W‐j
Electronics And Telecommunications Res. Inst. Daejon Kor
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Lee Bo-young
R&d Center Lg Siltron Inc.
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LEE Ki-Sang
R&D Center, LG Siltron Inc.
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LEE Bo-Young
R&D Center, LG Siltron Inc.
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Yoo Hak-Do
R&D Center, LG Siltron Inc.
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CHO Won-Ju
Hyundai Electronics Co.
関連論文
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- Effects of Surface Roughness and Copper Contamination on the Oxide Breakdown of Silicon Wafer(Semiconductors)
- Observation of Micro-Oxygen Precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and Their Effects on Thin Gate Oxide Breakdown : Semiconductors
- Collection Efficiency of Metallic Contaminants on Si Wafer by Vapor-Phase Decomposition-Droplet Collection
- Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Orginated-Pits-free Wafer as a Function of Oxide Thickness
- Time-resolved luminescence spectra of porous Si
- Determination of Flow Pattern Defect Area by μ-Photoconductivity Decay Lifetime Measurement
- Behavior of Thermally Induced Defects in Heavily Boron-Doped Silicon Crystals