Yoo Hak-Do | R&D Center, LG Siltron Inc.
スポンサーリンク
概要
関連著者
-
Yoo Hak-Do
R&D Center, LG Siltron Inc.
-
Yoo H‐d
R&d Center Lg Siltron Inc.
-
Lee Bo-young
R&d Center Lg Siltron Inc.
-
LEE Bo-Young
R&D Center, LG Siltron Inc.
-
Kim Young-hun
R & D Center Lg Siltron Inc.
-
Lee K‐s
Lg Siltron Inc. Kyungbuk Kor
-
Kim Y‐h
R & D Center Lg Siltron Inc.
-
LEE Ki-Sang
R&D Center, LG Siltron Inc.
-
KIM Young-Hun
R&D Center, LG Siltron Inc.
-
Lee S‐h
Department Of Chemistry Kyungpook National University
-
Lee Sang-hak
Department Of Chemistry Kyungpook National University
-
Cho W‐j
Electronics And Telecommunications Res. Inst. Daejon Kor
-
KIM Eun-Ha
R&D Center, LG Siltron Inc.
-
CHUNG Hye-Young
R&D Center, LG Siltron Inc
-
CHO Hyo-Yong
R&D Center, LG Siltron Inc
-
CHO Won-Ju
Hyundai Electronics Co.
-
Kim Eun-ha
R&d Center Lg Siltron Inc.
-
Chung Hye-young
R & D Center Lg Siltron Inc.
-
Yoo Hak-Do
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
-
Lee Hong-Woo
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
-
Kim Jeong-Mio
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
-
Choi Joon-Young
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
-
Cho Hyon-Jong
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
-
Lee Hong-Woo
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
-
Choi Joon-Young
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
-
Kim Young-Hum
R&D Center, LG Siltron Inc
-
Kim Jeong-Min
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
-
Cho Hyon-Jong
R&D Center, LG Siltron Inc., 283 Imsoo-Dong, Kumi, Kyung-Buk, 730-350, Korea
著作論文
- Effects of Surface Roughness and Copper Contamination on the Oxide Breakdown of Silicon Wafer(Semiconductors)
- Collection Efficiency of Metallic Contaminants on Si Wafer by Vapor-Phase Decomposition-Droplet Collection
- Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Orginated-Pits-free Wafer as a Function of Oxide Thickness
- Behavior of Thermally Induced Defects in Heavily Boron-Doped Silicon Crystals