Suppression of Current Hysteresis in Carbon Nanotube Thin-Film Transistors
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概要
- 論文の詳細を見る
Source–drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.
- Japan Society of Applied Physicsの論文
- 2007-06-25
著者
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Aoyagi Yoshinobu
Riken
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TSUKAGOSHI Kazuhito
RIKEN
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Iwasa Yoshihiro
Crest Japan Science And Technology Agency (jst)
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Iwasa Yoshihiro
CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 333-0012, Japan
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Sekiguchi Masahiro
RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Kanbara Takayoshi
RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Takenobu Taishi
CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 333-0012, Japan
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Tsukagoshi Kazuhito
RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Aoyagi Yoshinobu
RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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