Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-01-31

著者

• ISHII Makoto

  Optoelectronics Joint Research Laboratory

• HARA Tamio

  Toyota Technological Institute

• Aoyagi Y

  Inst. Physics And Chemical Res. (riken) Wako Jpn

• Aoyagi Y

  Semiconductor Laboratory Riken The Institute For Physical And Chemical Research

• Hara T

  Toyota Technological Inst. Nagoya Jpn

• Ishii M

  Electrotechnical Laboratory

• Ishii M

  Optoelectronics Joint Research Laboratory

• Ishii M

  Toyota Central Res. And Dev. Lab. Inc. Aichi Jpn

• Yamamoto Y

  College Of Engineering Hosei University

• Yamamoto Yuichi

  Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul

• YAMAMOTO Yasuhiro

  Research Center of Ion Beam Technology, Hosei University

• Ishii M

  Liquid Crystal Lab. Sharp Corp.

• Aoyagi Y

  Riren (the Institute Of Physical And Chemical Research)

• Aoyagi Yoshinobu

  Riken

• Meguro T

  Tohoku Univ. Sendai Jpn

• HAMAGAKI Manabu

  RIKEN, The Institute of Physical and Chemical Research

• HARA Tamio

  RIKEN, The Institute of Physical and Chemical Research

• Yamamoto Y

  Nara Inst. Sci. And Technol. Nara Jpn

• Aoyagi Yoshinobu

  Nanoelectronic Materials Laboratory Frontier Research Program Riken

• Aoyagi Y

  The Institute Of Physical And Chemical Research

• Ishii M

  Central Research Laboratory Nihon Cement Co. Lid.

• MEGURO Takashi

  RIKEN (The Institute of Physical and Chemical Research)

• KODAMA Hirokazu

  College of Engineering, Hosei University

• Yamamoto Yoshitugu

  Department Of Chemistry For Materials Faculty Of Engineering Mie University

• KODAMA Hidekazu

  Department of Chemistry, Faculty of Science, Science University of Tokyo

• Hamagaki M

  The Institute Of Physical And Chemical Research (riken)

• Hamagaki Manabu

  Akashi Technical Institute Kawasaki Heavy Industries

• Ishii M

  Shonan Inst. Technol. Kanagawa Jpn

• Meguro T

  Hokkaido Central Agricultural Experiment Station

• ISHII Masashi

  College of Engineering, Hosei University

• Kodama Hirokazu

  Department Of Chemistry Faculty Of Science Science University Of Tokyo

• Hamagaki Manabu

  Riken

• Yamamoto Yasuhiro

  Research Center Of Ion Beam Technology Hosei University

• Yamamoto Y

  Material Science Japan Advanced Institute Of Science And Technology

• Yamamoto Yasuhiro

  Research Center For Advanced Science And Technology University Of Tokyo

関連論文

• DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
• Dotted-Array Plasma Production by Using a Line-Focusing Lens System with Segmented Prism Array for Compact X-ray Laser Experiments
• Demonstration of X-Ray Amplification in an X-Ray Laser Cavity Pumped by a Pulse-Train Yttrium Aluminium Garnet Laser
• Debris from High-Aspect-Ratio Rectangular Focused Laser Irradiation on a Tape Target Surface in an X-Ray Laser System
• Observation of Gain and Double-pass Amplification of Li-like Al Soft X-ray Transitions in a Recombining Plasma Pumped by a Pulse-train YAG Laser
• Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
• Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
• Measurements of Spatial Coherence of Recombination X-Ray Laser
• Breakdown Characteristics of SF_6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages
• V-t Characteristics of SF6 Gap Disturbed by a Needle-Shaped Protrusion under Oscillating Transient Overvoltages
• Modeling of Electron Transport in Corrugated Quantum Wires
• Ballistic Weak Localization and Wave Function Scarring in Quantum Wires
• Is There a Magnetic-Field-Induced Breakdown in the Universality of Conductance Fluctuations?
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
• 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
• 30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
• Electronic Properties of Polysilane Calculated with the Real-Time Real-Space Higher-Order Finite-Difference Method
• Fast Algorithm for Calculating Two-Photon Absorption Spectra by Real-Time Real-Space Higher-Order Finite-Difference Method
• Probing the Discrete Level Spectrum of Open Quantum Dots
• Phase Breaking of Coherent Electron Waves in Dot Array Systems ( Quantum Dot Structures)
• The Role of Electron Phase Coherence in Quantum Transport through Open Ballistic Cavities ( Quantum Dot Structures)
• Quantum Transport in Single and Multiple Quantum Dots ( Quantum Dot Structures)
• Carrier Transport in Nanodevices
• Trajectory Transition Due to Gate Depletion in Corrugation Gated Quantum Wires
• Carrier Transport in Nanoscale Structures
• Electron Wave Interference in Ballistic and Quasi-Ballistic Nanostructures
• Zero-Current Voltage Fluctuations in Quantum Dots at High Magnetic Fields
• Study of Scattering Processes in Quantum Wires by a Correlation Field Analysis of the Phase Coherent Interferences
• The Magnetic Field Dependent Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
• Experimental Determination of the Conduction Width in Quasi Ballistic Wires
• Preparation of Superconducting Bi-Pb-Sr-Ca-Cu-O Glass Ceramics with T_=106 K
• Formation of the High-T_c Phase of Bi_Pb_xSr_Ca_Cu_O_y (0 ≦ x ≦ 0.05)
• Effect of Annealing on Superconductivity in Bi-Pb-Sr-Ca-Cu-O System
• Influence of Intermediate Pressing on Superconducting Characteristics in Bi-Pb-Sr-Ca-Cu-O System
• Influence of Cooling Rate on Superconducting Characteristics of Bi-Pb-Sr-Ca-Cu-O Ceramics
• Superconducting Characteristics and Microstructure of Bi-Pb-Sr-Ca-Cu-O Ceramics : Electrical Properties of Condensed Matter
• Critical Current Density of Bi-Pb-Sr-Ca-Cu-O Superconducting Ceramics : Electrical Properties of Condensed Matter
• Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
• Quantum dot transport of semiconducting single-wall carbon nanotubes
• 招待講演 Carbon nanotubes for quantum-dot devices
• 招待講演 Carbon nanotubes for quantum-dot devices
• Quantum Dot Formation in Single-Wall Carbon Nanotubes
• Quantum Dots in Carbon Nanotubes
• Characterization of Small Superconducting Rings and Its Possible Application to New Single Flux Quantum Devices
• Observation of Aharonov-Bohm Oscillations in the Magnetoresistance of a GaAs/AlGaAs Quantum Dot
• The Transmission Properties of Quantum Dots at High Magnetic Fields
• Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
• Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
• Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
• Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
• Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
• Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
• V-Shaped Gate High Electron Mobility Transistor (VHEMT)
• Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
• Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
• New Etching System with a Large Diameter Using Electron Beam Excited Plasma
• Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
• Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
• Study of Surface Processes in the Digital Etching of GaAs
• XANES Analysis of Optical Activation Process of Er in Si:Er2O3 Thin Film:Electronic and Structural Modifications around Er (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
• Comparative Studies between Ag-Sheathed YBa_2Cu_3O_y Wires and Sintered YBa_2Cu_3O_y
• Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
• Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
• Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
• Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
• Low-Pressure OMVPE of GaAs Using Triethylgallium
• Processing and Superconducting Properties of GdBa_2Cu_3O_ Ceramics : Electrical Properties Condensed Matter
• Influence of Preparative Conditions on the Superconducting Characteristics in GdBa_2Cu_3O_ Ceramics : Electrical Properties of Condensed Matter
• Observation of GdBa_2Cu_3O_ Ceramic Microstructure : Electrical Properties of Condensed Matter
• Enhancement of the 15.4 nm Line of the Lithiumlike Aluminum Recombining Plasma Laser using a Half Cavity
• Enhancement of Soft X-Ray Emission from Al Plasma by Pulse Train Laser Irradiation
• Observation of Soft X-Ray Amplified Spontaneous Emission in a Recombining Si Plasma Pumped by a Low-Power Laser
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
• Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
• Soft X-Ray Lasing in an Al Plasma Produced by a 6 J Laser
• New High Current Low Energy Ion Source
• Dependence of Magnetic Shielding Property on Critical Current Density
• Magnetic Shielding Propertiy of Bi(Pb)-Sr-Ca-Cu-O Superconducting Tube
• Effect of Multipulse Waveform on Gains of Soft X-Ray Lines of Lithium-Like Aluminum Ions in Recombining Plasmas
• Critical Current Density and Microstructure of Superconducting YBa_2Cu_3O Films Prepared by a Tape Casting Method : Electrical Properties Condensed Matter
• Fabrication of Superconducting YBa_2Cu_3O_ Films by a Tape Casting Method
• Magnetic Detector Using Bi-Pb-Sr-Ca-Cu-O Superconductive Film
• Debris from the Target of an X-Ray Laser System and the Effect on Cavity Mirrors
• Crystalline Phases in Superconductor Ba-Y-Cu-O with High T_c Prepared by Melting Method
• Alignment Technique for Thin-Film-Transistor Liquid-Crystal Displays : Liquid Crystal Display
• Alignment Technique for Thin-Film-Transistor Liquid-Crystal Displays
• Contactless Measurement of Young's Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators
• Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
• Carbon Ion Implantation in GaAs
• Thermal Stability in Al/Ti/GaAs Schottky Barrier
• A Transverse Electron Beam Source for the Excitation of CW Lasers
• Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
• Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy
• Effect of Arsenic Source on Electron Trap Concentrationsin MBE-Grown Al_Ga_As
• Effects of Growth Conditions on Electron Trap Concentrations in Si-Doped Al_Ga_As Grown by MBE
• Characterization of Y-Ba-Cu-O Thin Films on Metallic Substrates Using Co-Evaporation Technique
• Application of a Ferroelectric Liquid-Crystal Cell to an Electric Field Sensor
• Superficial Aggravation of Sputter-deposited Bi-Sr-Ca-Cu-O Films by Annealing : Electrical Properties of Condensed Matter
• Variable Nonlinear Transfer Characteristics of MSLM

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