Effect of Arsenic Source on Electron Trap Concentrationsin MBE-Grown Al_<0.2>Ga_<0.8>As
スポンサーリンク
概要
- 論文の詳細を見る
Electron traps in n-Al_<0.2>Ga_<0.8>As layers grown by molecular beam epitaxy (MBE) have been studied by deep level transient spectroscopy. When compared among the layers grown sequentially, the concentrations of the two dominant traplevels, ME5 (activation energy 0.63 eV) and ME6 (0.71 eV), are found to decrease markedly with the growth run number. The trap concentrations also depend sensitively on the choice of arsenic source material. These results show that the traps are closely associated with volatile impurities in arsenic materials.
- 社団法人応用物理学会の論文
- 1985-10-20
著者
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MIHARA Minoru
Optoelectronics Joint Research Laboratory
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ISHII Makoto
Optoelectronics Joint Research Laboratory
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Ishii M
Electrotechnical Laboratory
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Ishii M
Optoelectronics Joint Research Laboratory
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Mihara Minoru
Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co
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Ishii M
Liquid Crystal Lab. Sharp Corp.
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Ishii M
Central Research Laboratory Nihon Cement Co. Lid.
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Miki Masami
Department Of Earth & Space Science Graduate School Of Science Osaka University
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Yamanaka K
Mechanical Engineering Lab. Ibaraki Jpn
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Yamanaka K
Graduate School Of Engineering Tohoku University
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Naritsuka S
Meijo Univ. Nagoya Jpn
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MANNOH Masaya
Optoelectronics Joint Research Laboratory
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NARITSUKA Shigeya
Optoelectronics Joint Research Laboratory
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YAMANAKA Kenichi
Optoelectronics Joint Research Laboratory
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