Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Using electron beam excited plasma chemical vapor deposition, nanocrystalline Si films can be grown without H_2 dilution. This paper describes the effects of growth parameters on the growth rate and the crystallinity of Si films.
- 社団法人応用物理学会の論文
- 2000-10-15
著者
-
KONOMI Ichiro
TOYOTA Central Research and Development Laboratories Inc.
-
HARA Tamio
Toyota Technological Institute
-
Hara Tamio
Toyota Technological Inst. Nagoya Jpn
-
Konomi Ichiro
Toyota Central R&d Labs. Inc.
-
Konomi Ichiro
Toyota Central Research & Development Laboratories Inc.
-
ITO Tadashi
TOYOTA Central Research & Development Laboratories, Inc.
-
YAMAGUCHI Masafumi
Toyota Technological Institute
-
Ito Tadashi
Toyota Central Research & Development Laboratories Inc.
-
Ban Masahito
Kawasaki Heavy Industries Ltd.
-
KAWAMURA Kazuhiko
Chubu Electric Power Co.,Inc.
-
Kawamura Kazuhiko
Chubu Electric Power Co. Inc.
-
IMAIZUMI Mitsuru
Toyota Technological Institute
-
YAMAGUCHI Koji
Toyota Technological Institute
-
OKITSU Kazuhiko
Toyota Technological Institute
-
TOHKAI Masakuni
Kawasaki Heavy Industries Ltd.
関連論文
- Thermally Induced Structural Modification of Nanometer-Order Mo/Si Multilayers by the Spectral Reflectance of Laser-Plasma Soft X-Rays
- Dotted-Array Plasma Production by Using a Line-Focusing Lens System with Segmented Prism Array for Compact X-ray Laser Experiments
- Demonstration of X-Ray Amplification in an X-Ray Laser Cavity Pumped by a Pulse-Train Yttrium Aluminium Garnet Laser
- Debris from High-Aspect-Ratio Rectangular Focused Laser Irradiation on a Tape Target Surface in an X-Ray Laser System
- Observation of Gain and Double-pass Amplification of Li-like Al Soft X-ray Transitions in a Recombining Plasma Pumped by a Pulse-train YAG Laser
- Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
- Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
- Measurements of Spatial Coherence of Recombination X-Ray Laser
- 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
- Internal Stress of CoSi_2 Films Formed by Rapid Thermal Annealing
- Stress Measurements in Silicon Substrates with TiSi_2 Patterns Using Raman Microprobe
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Single-Shot Creation of Nanometer-Sized Silicon Tadpoles by Ultrahigh-Intensity Laser
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
- Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
- New Etching System with a Large Diameter Using Electron Beam Excited Plasma
- Effects of Annealing on Type Converted Si and Space Solar Cells Irradiated with Heavy Fluence 1 MeV Electrons
- Analysis of Radiation Damage to Si Solar Cells under High-Fluence Electron Irradiation
- Comparative Studies between Ag-Sheathed YBa_2Cu_3O_y Wires and Sintered YBa_2Cu_3O_y
- Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
- Enhancement of the 15.4 nm Line of the Lithiumlike Aluminum Recombining Plasma Laser using a Half Cavity
- Enhancement of Soft X-Ray Emission from Al Plasma by Pulse Train Laser Irradiation
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Observation of Soft X-Ray Amplified Spontaneous Emission in a Recombining Si Plasma Pumped by a Low-Power Laser
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- Soft X-Ray Lasing in an Al Plasma Produced by a 6 J Laser
- New High Current Low Energy Ion Source
- Effect of Multipulse Waveform on Gains of Soft X-Ray Lines of Lithium-Like Aluminum Ions in Recombining Plasmas
- Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
- Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
- In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
- Debris from the Target of an X-Ray Laser System and the Effect on Cavity Mirrors
- Investigation of High-Efficiency InGaP/GaAs Tandem Solar Cells under Concentration Operation
- Two-Terminal Monolithic In_Ga_P/GaAs Tandem Solar Cells with a High Conversion Efficiency of Over 30%
- Plasma Carburizing of Tungsten(Physics, Processes, Instruments & Measurements)
- Deep Level Transient Spectroscopy Analysis of 10MeV Proton and 1MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells
- Radiation Resistance of InP-Related Materials
- Analysis of Photovoltaic Properties of C_60-Si Heterojunction Solar Cells
- Contactless Measurement of Young's Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators
- Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
- Carbon Ion Implantation in GaAs
- Thermal Stability in Al/Ti/GaAs Schottky Barrier
- A Transverse Electron Beam Source for the Excitation of CW Lasers
- Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
- InP Solar Cells and their Flight Experiments
- Lattice Location of ^N Atoms in SiC Analyzed by Nuclear Resonant Reaction
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
- Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
- Numerical Analysis for Radiation Resistant InGaP Solar Cell
- High Degree of Dissociation of Nitrogen Molecules in Large-Volume Electron-Beam-Excited Plasma
- Characterization of Y-Ba-Cu-O Thin Films on Metallic Substrates Using Co-Evaporation Technique
- New Surface Treatment of Polymers by Simultaneous Exposure to Vacuum Ultra-Violet Light and Nanometer-Sized Particles
- Application of a Ferroelectric Liquid-Crystal Cell to an Electric Field Sensor
- Analysis of Heteroepitaxial AlGaAs/Si Tandem Solar Cell for Concentrator Applications
- Medium-Energy Ion Scattering Analysis with 50 keV He^+ by the Time-of-Flight Technique
- Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multi-junction Tandem Structures
- Development of neutral beam source using electron beam excited plasma
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
- Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
- Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells
- Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
- Variable Nonlinear Transfer Characteristics of MSLM
- Contactless Measurement of Young’s Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators
- Structural and Molecular Changes of C Thin Films with Incorporated Magnesium Atoms (Special Issue : Solid State Devices and Materials (2))
- Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
- Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Compound-Layer-Free Nitriding of Ferrous Metals Using Electron-Beam-Excited Nitrogen Plasma
- Crystal Structures of Copper–Phthalocyanine on C60(111) Surface Grown by Molecular Beam Epitaxy
- Single-Shot Creation of Nanometer-Sized Silicon Tadpoles by Ultrahigh-Intensity Laser
- Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
- Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
- Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
- Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
- Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
- Debris from the Target of an X-Ray Laser System and the Effect on Cavity Mirrors
- Surface Treatment of Polymers by Simultaneous Exposure to Vacuum UV and Nanometer-Sized Particles in Helium Atmosphere
- Measurements of Spatial Coherence of Recombination X-Ray Laser
- Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
- Formation of Diamond Like Carbon by a Pure Carbon Arc Under High Vacuum
- III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells
- Improvement of Compact Electron-Beam-Excited Plasma Source for Increased Producible Plasma Density