Numerical Analysis for Radiation Resistant InGaP Solar Cell

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Numerical analyses are carried out to optimize radiation resistant of InGaP solar cell under the effect of low energy protons. The radiation degradation parameters of InGaP used to investigate the effect of cell configuration, base thickness, junction depth, base carrier concentration, and AlInP window layer. Numerical analyses for both cells structure n--p and p--n shows that, the n--p structure is more radiation resistant in a solar cell with shallow junction (0.05 μm), thin base thickness (0.4 μm) and low base carrier concentration ($1 \times 10^{16}$ cm-3), while p--n cell structure is relatively radiation resistant in deep junction solar cell (0.1 μm) with thin base thickness and low base carrier concentration. The formation of AlInP window layer increases the radiation resistant of p--n cell structure, while no significant change in the radiation resistant of n--p cell structure was observed due to the formation of AlInP.
2011-07-25