Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
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概要
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One of the fundamental objectives for research and development of space solar cells is to improve their radiation resistance. InGaP solar cells with low base carrier concentrations under low-energy proton irradiations have shown high radiation resistances. In this study, an analytical model for low-energy proton radiation damage to InGaP subcells based on a fundamental approach for radiative and nonradiative recombinations has been proposed. The radiation resistance of InGaP subcells as a function of base carrier concentration has been analyzed by using the radiative recombination lifetime and damage coefficient K for the minority-carrier lifetime of InGaP. Numerical analysis shows that an InGaP solar cell with a lower base carrier concentration is more radiation-resistant. Satisfactory agreements between analytical and experimental results have been obtained, and these results show the validity of the analytical procedure. The damage coefficients for minority-carrier diffusion length and carrier removal rate with low-energy proton irradiations have been observed to be dependent on carrier concentration through this study. As physical mechanisms behind the difference observed between the radiation-resistant properties of various base doping concentrations, two mechanisms, namely, the effect of a depletion layer as a carrier collection layer and generation of the impurity-related complex defects due to low-energy protons stopping within the active region, have been proposed.
- 2010-12-25
著者
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IMAIZUMI Mitsuru
Japan Aerospace Exploration Agency
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YAMAGUCHI Masafumi
Toyota Technological Institute
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TAKAMOTO Tatsuya
SHARP Corporation
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SATO Shin-ichiro
Japan Atomic Energy Agency (JAEA)
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Ohshima Takeshi
Japan Atomic Energy Agency
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Morioka Chiharu
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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Elfiky Dalia
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Sasaki Takuo
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Elnawawy Mohamed
Faculty of Science, Cairo University, Giza 12613, Egypt
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Eldesoky Tarek
Faculty of Women for Science and Culture, Ain shams University, Cairo 11361, Egypt
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Ghitas Ahmed
National Institute for Astronomy and Geophysics Research, Helwan, Cairo 11421, Egypt
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Yamaguchi Masafumi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Imaizumi Mitsuru
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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Takamoto Tatsuya
SHARP Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan
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