Temporal donor generation in undoped hydrogenated amorphous silicon induced by swift proton bombardment

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概要

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著者

• SATO Shin-ichiro

  Japan Atomic Energy Agency (JAEA)

関連論文

• Temporal donor generation in undoped hydrogenated amorphous silicon induced by swift proton bombardment
• Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
• Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment
• Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge

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