Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
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概要
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GaAs solar cells with the lower base carrier concentration under low energy proton irradiations had shown experimentally the better radiation-resistance. Analytical model based on fundamental approach for radiative and non-radiative recombination has been proposed for radiation damage in GaAs sub-cells. The radiation resistance of GaAs sub-cells as a function of base carrier concentration has been analyzed by using radiative recombination lifetime and damage coefficient for minority carrier lifetime. Numerical analysis shows good agreement with experimental results. The effect of carrier concentration upon the change of damage constant and carrier removal rate have been studied.
- 2010-12-25
著者
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IMAIZUMI Mitsuru
Japan Aerospace Exploration Agency
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YAMAGUCHI Masafumi
Toyota Technological Institute
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TAKAMOTO Tatsuya
SHARP Corporation
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SATO Shin-ichiro
Japan Atomic Energy Agency (JAEA)
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Ohshima Takeshi
Japan Atomic Energy Agency
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Morioka Chiharu
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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Elfiky Dalia
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Sasaki Takuo
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Elnawawy Mohamed
Faculty of Science, Cairo University, Giza 12613, Egypt
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Ghitas Ahmed
National Institute for Astronomy and Geophysics Research, Helwan, Cairo 11421, Egypt
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Eldesuky Tarek
Faculty of Women for Science and Culture, Ain shams University, Cairo 11361, Egypt
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Ohshima Takeshi
Japan Atomic Energy Research Agency, 1233 Watanuki, Takasaki, Gunnma 370-1292, Japan
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Yamaguchi Masafumi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Imaizumi Mitsuru
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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