SATO Shin-ichiro | Japan Atomic Energy Agency (JAEA)

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概要

• 同名の論文著者
• Japan Atomic Energy Agency (JAEA)の論文著者

関連著者

• SATO Shin-ichiro

  Japan Atomic Energy Agency (JAEA)

• IMAIZUMI Mitsuru

  Japan Aerospace Exploration Agency

• Ohshima Takeshi

  Japan Atomic Energy Agency

• YAMAGUCHI Masafumi

  Toyota Technological Institute

• TAKAMOTO Tatsuya

  SHARP Corporation

• Morioka Chiharu

  Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan

• Elfiky Dalia

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Sasaki Takuo

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Elnawawy Mohamed

  Faculty of Science, Cairo University, Giza 12613, Egypt

• Ghitas Ahmed

  National Institute for Astronomy and Geophysics Research, Helwan, Cairo 11421, Egypt

• Yamaguchi Masafumi

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Imaizumi Mitsuru

  Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan

• OHSHIMA Takeshi

  Japan Atomic Energy Research Institute

• Kondo Michio

  National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn

• Imaizumi Mitsuru

  Japan Aerospace Exploration Agency (jaxa)

• SAI Hitoshi

  National Institute of Advanced Industrial Science and Technology (AIST)

• SHIMAZAKI Kazunori

  Japan Aerospace Exploration Agency (JAXA)

• Ohshima Takeshi

  Japan Atomic Energy Agency (jaea)

• Eldesoky Tarek

  Faculty of Women for Science and Culture, Ain shams University, Cairo 11361, Egypt

• Eldesuky Tarek

  Faculty of Women for Science and Culture, Ain shams University, Cairo 11361, Egypt

• Ohshima Takeshi

  Japan Atomic Energy Research Agency, 1233 Watanuki, Takasaki, Gunnma 370-1292, Japan

• Takamoto Tatsuya

  SHARP Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan

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著作論文

• Temporal donor generation in undoped hydrogenated amorphous silicon induced by swift proton bombardment
• Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
• Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment
• Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge

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