Elfiky Dalia | Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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概要
- Elfiky Daliaの詳細を見る
- 同名の論文著者
- Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japanの論文著者
関連著者
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YAMAGUCHI Masafumi
Toyota Technological Institute
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Elfiky Dalia
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Sasaki Takuo
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Elnawawy Mohamed
Faculty of Science, Cairo University, Giza 12613, Egypt
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Ghitas Ahmed
National Institute for Astronomy and Geophysics Research, Helwan, Cairo 11421, Egypt
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IMAIZUMI Mitsuru
Japan Aerospace Exploration Agency
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TAKAMOTO Tatsuya
SHARP Corporation
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SATO Shin-ichiro
Japan Atomic Energy Agency (JAEA)
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Ohshima Takeshi
Japan Atomic Energy Agency
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Morioka Chiharu
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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Yamaguchi Masafumi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Imaizumi Mitsuru
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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Eldesoky Tarek
Faculty of Women for Science and Culture, Ain shams University, Cairo 11361, Egypt
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Eldesuky Tarek
Faculty of Women for Science and Culture, Ain shams University, Cairo 11361, Egypt
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Elfiky Dalia
Toyota Technological Institute, Nagoya 468-8511, Japan
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Eldesouky Tarek
Faculty of Women for Science and Culture, Ain Shams University, Cairo 11361, Egypt
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Ohshima Takeshi
Japan Atomic Energy Research Agency, 1233 Watanuki, Takasaki, Gunnma 370-1292, Japan
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Takamoto Tatsuya
SHARP Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan
著作論文
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
- Numerical Analysis for Radiation Resistant InGaP Solar Cell
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge