Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment
スポンサーリンク
概要
- 論文の詳細を見る
- 2011-06-25
著者
-
OHSHIMA Takeshi
Japan Atomic Energy Research Institute
-
IMAIZUMI Mitsuru
Japan Aerospace Exploration Agency
-
Kondo Michio
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Imaizumi Mitsuru
Japan Aerospace Exploration Agency (jaxa)
-
SATO Shin-ichiro
Japan Atomic Energy Agency (JAEA)
-
SAI Hitoshi
National Institute of Advanced Industrial Science and Technology (AIST)
-
SHIMAZAKI Kazunori
Japan Aerospace Exploration Agency (JAXA)
-
Ohshima Takeshi
Japan Atomic Energy Agency (jaea)
-
Ohshima Takeshi
Japan Atomic Energy Agency
関連論文
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
- Effects of 1MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
- Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching
- Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
- Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
- A Super Thin Film Transistor in Advanced Poly Si Films
- Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
- 8" Uniform Electron Cyclotron Resonance Plasma Source Using a Circular TE_ Mode Microwave
- Microcrystalline Si_Ge_x Solar Cells Exhibiting Enhanced Infrared Response with Reduced Absorber Thickness
- Effects of Electron Irradiation on CuInS_2 Crystals
- Temporal donor generation in undoped hydrogenated amorphous silicon induced by swift proton bombardment
- Grain Growth and Conductive Characteristics of Super Thin Polysilicon Films by Oxidation
- Origin of the Improved Performance of High-Deposition-Rate Microcrystalline Silicon Solar Cells by High-Pressure Glow Discharge
- Stress-Induced Nucleation of Microcrystalline Silicon from Amorphous Phase
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
- Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes
- Investigation of Light-Induced Defect Depth Profile in Hydrogenated Amorphous Silicon Films : Semiconductors
- Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment
- Systematic Study of Photodegradation of Tailored Nanostructure Si Solar Cells by Controlling Their Medium Range Order
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
- Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation
- Si Substrate Suitable for Radiation-Resistant Space Solar Cells
- Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor
- Effects of 1 MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
- Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
- Key Issue for the Fabrication of High-Efficiency Microcrystalline Silicon Thin-Film Solar Cells at Low Temperatures
- Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
- Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique
- Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
- Analysis of Anomalous Degradation of Cu(In,Ga)Se2 Thin-Film Solar Cells Irradiated with Protons
- Effects of Electron Irradiation on CuInS2 Crystals
- Mechanisms of Reduction in Hole Concentration in Al-Implanted p-Type 6H-SiC by 1 MeV Electron Irradiation
- Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation
- Progress in Research on Laser Transmission Systems, Atmospheric Influence on Laser Transmission, and Laser Photovoltaics in Laser Space Solar Power System