Investigation of Light-Induced Defect Depth Profile in Hydrogenated Amorphous Silicon Films : Semiconductors
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概要
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We have investigated the light-induced defects (LIDs) depth profiles in hydrogenated amorphous silicon films using electron spin resonance in combination with the layer-by-layer etching technique. This method enables us to study the LIDs depth profiles without the influence of film thickness on defect creation kinetics. We observed the uniform LIDs creation in the films by uniformly absorbed light exposure, indicating the absence of a sensitive layer against defects creation. The LIDs depth profile agrees with the simulated photocarrier bimolecular recombination rate profile rather than the profile of the total recombination rate or that through defects. We demonstrate that the asymmetry of the band tails modifies the defect creation kinetics predicted from the bimolecular recombination model.
- 社団法人応用物理学会の論文
- 2002-11-15
著者
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Matsuda Akihisa
National Institute Of Advanced Industrial Science And Technology
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Kondo Michio
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kondo Michio
National Institute Of Advanced Industrial Science And Technology
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SHIMIZU Satoshi
National Institute of Advanced Industrial Science and Technology
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STRADINS Paul
National Renewable Energy Laboratory
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